Author: Gao, B.
Paper Title Page
MOCO01 Online Touschek Beam Lifetime Measurement Based on the Precise Bunch-By-Bunch Beam Charge Monitor 35
  • B. Gao, F.Z. Chen, Y.B. Leng
    SSRF, Shanghai, People’s Republic of China
  • Y.M. Zhou
    SINAP, Shanghai, People’s Republic of China
  Beam current and lifetime are the most important parameters to characterize the beam and machine quality of an electron storage ring. In order to describe the behavior of all electron bunches completely and accurately, a precisely bunch-by-bunch charge monitor has been developed at SSRF. Method called two-point equilibrium sampling is introduced to avoid the influence of longitudinal oscillation on the sampling point, thanks to this, the resolution of the BCM was below 0.2 pC. Utilizing the advantages of BCM’s high refresh rate and high resolution, the system can meet the requirement of monitor the bunch-by-bunch beam lifetime, measure touschek lifetime and vacuum lifetime. In this paper, experiments and and analysis will be described in detail.  
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About • paper received ※ 03 September 2019       paper accepted ※ 08 September 2019       issue date ※ 10 November 2019  
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